DIN 8954-10-1981 敞开式营业冷藏柜.温度级别

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【英文标准名称】:Openrefrigerateddisplaycabinets;temperatureclasses
【原文标准名称】:敞开式营业冷藏柜.温度级别
【标准号】:DIN8954-10-1981
【标准状态】:作废
【国别】:德国
【发布日期】:1981-12
【实施或试行日期】:
【发布单位】:德国标准化学会(DIN)
【起草单位】:
【标准类型】:()
【标准水平】:()
【中文主题词】:温度;规范(审批);贸易;冷藏柜
【英文主题词】:trade;refrigeratedcabinets;temperature;specification(approval)
【摘要】:
【中国标准分类号】:J73
【国际标准分类号】:5390
【页数】:2P;A4
【正文语种】:德语


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【英文标准名称】:Aluminiumandaluminiumalloys;Determinationofnickel;Spectrophotometricmethodusingdimethylglyoxime
【原文标准名称】:铝和铝合金镍含量的测定丁二酮肟分光光度法
【标准号】:ISO3979-1977
【标准状态】:现行
【国别】:国际
【发布日期】:1977-05
【实施或试行日期】:
【发布单位】:国际标准化组织(IX-ISO)
【起草单位】:ISO/TC79
【标准类型】:()
【标准水平】:()
【中文主题词】:轻金属;化学分析;丁二酮肟;镍;铝合金;铝;分光光度测量分析;分光光度法;含量测定;化学分析和试验
【英文主题词】:Aluminium;Aluminiumalloys;Chemicalanalysisandtesting;Determinationofcontent;Lightmetals;Nickel;Spectrophotometry
【摘要】:Themethodisapplicabletonickelcontentsbetween0,001and3%(m/m).Specifiesprinciple,reagents,apparatus,sampling,procedure,expressionofresultsandtestreport.
【中国标准分类号】:H12
【国际标准分类号】:77_120_10
【页数】:5P;A4
【正文语种】:英语


【英文标准名称】:StandardPracticeforCharacterizingNeutronFluenceSpectrainTermsofanEquivalentMonoenergeticNeutronFluenceforRadiation-HardnessTestingofElectronics
【原文标准名称】:确定电子辐射强度试验用等效单能级中子流量的能级中中子流量能谱的特征的标准实施规程
【标准号】:ASTME722-2009e1
【标准状态】:现行
【国别】:美国
【发布日期】:2009
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:E10.07
【标准类型】:(Practice)
【标准水平】:()
【中文主题词】:
【英文主题词】:displacementdamage;electronichardness;galliumarsenide;hardnessparameter;silicon;silicondamage;siliconequivalentdamage(SED);1&x2013;MeVequivalentfluence;Displacement--electronicmaterials/applications;
【摘要】:Thispracticeisimportantincharacterizingtheradiationhardnessofelectronicdevicesirradiatedbyneutrons.Thischaracterizationmakesitfeasibletopredictsomechangesinoperationalpropertiesofirradiatedsemiconductordevicesorelectronicsystems.Tofacilitateuniformityoftheinterpretationandevaluationofresultsofirradiationsbysourcesofdifferentfluencespectra,itisconvenienttoreducetheincidentneutronfluencefromasourcetoasingleparameterx2014;anequivalentmonoenergeticneutronfluencex2014;applicabletoaparticularsemiconductormaterial.Inordertodetermineanequivalentmonoenergeticneutronfluence,itisnecessarytoevaluatethedisplacementdamageoftheparticularsemiconductormaterial.Ideally,thisquantityiscorrelatedtothedegradationofaspecificfunctionalperformanceparameter(suchascurrentgain)ofthesemiconductordeviceorsystembeingtested.However,thiscorrelationhasnotbeenestablishedunequivocallyforalldevicetypesandperformanceparameterssince,inmanyinstances,othereffectsalsocanbeimportant.Ionizationeffectsproducedbytheincidentneutronfluenceorbygammaraysinamixedneutronfluence,short-termandlong-termannealing,andotherfactorscancontributetoobservedperformancedegradation(damage).Thus,cautionshouldbeexercisedinmakingacorrelationbetweencalculateddisplacementdamageandperformancedegradationofagivenelectronicdevice.Thetypesofdevicesforwhichthiscorrelationisapplicable,andnumericalevaluationofdisplacementdamagearediscussedintheannexes.Theconceptof1-MeVequivalentfluenceiswidelyusedintheradiation-hardnesstestingcommunity.Ithasmeritsanddisadvantagesthathavebeendebatedwidely(9-12).Forthesereasons,specificsofastandardapplicationofthe1-MeVequivalentfluencearepresentedintheannexes.1.1Thispracticecoversproceduresforcharacterizingneutronfluencefromasourceintermsofanequivalentmonoenergeticneutronfluence.Itisapplicabletoneutroneffectstesting,tothedevelopmentoftestspecifications,andtothecharacterizationofneutrontestenvironments.Thesourcesmayhaveabroadneutron-energyrange,ormaybemono-energeticneutronsourceswithenergiesupto20MeV.Thispracticeisnotapplicableincaseswherethepredominantsourceofdisplacementdamageisfromneutronsofenergylessthan10keV.Therelevantequivalenceisintermsofaspecifiedeffectoncertainphysicalpropertiesofmaterialsuponwhichthesourcespectrumisincident.Inordertoachievethis,knowledgeoftheeffectsofneutronsasafunctionofenergyonthespecificpropertyofthematerialofinterestisrequired.Sharpvariationsintheeffectswithneutronenergymaylimittheusefulnessofthispracticeinthecaseofmono-energeticsources.1.2Thispracticeispresentedinamannertobeofgeneralapplicationtoavarietyofmaterialsandsources.Correlationbetweendisplacements(1-3)causedbydifferentparticles(electrons,neutrons,protons,andheavyions)isbeyondthescopeofthispractice.Inradiation-hardnesstestingofelectronicsemiconductordevices,specificmaterialsofinterestincludesiliconandgalliumarsenide,andtheneutronsourcesgenerallyaretestandresearchreactorsandcalifornium-252irradiators.1.3Thetechniqueinvolvedreliesonthefollowingfactors:(1)adetaileddeterminationofthefluencespectrumoftheneutronsource,and(2)aknowledgeofthedegradation(damage)effectsofneutronsasafunctionofenergyonspecificmaterialproperties.1.4Thedetaileddeterminationoft......
【中国标准分类号】:A58
【国际标准分类号】:31_080_01
【页数】:27P.;A4
【正文语种】:英语